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| 18-23 GHz GaAs MMIC Power Amplifier AA022P1-00 Features I Single Bias Supply Operation (6 V) I 14 dB Typical Small Signal Gain I 24.5 dBm Typical P1 dB Output Power at 23 GHz I 0.25 m Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.700 1.613 1.371 0.086 0.000 0.000 0.520 2.784 3.400 0.329 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Alpha's two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24.5 dBm with 13 dB associated gain and 11% power added efficiency at 23 GHz. The chip uses Alpha's proven 0.25 m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the high reliability and commercial areas where high power and gain are required. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55C to +90C -65C to +150C 7 VDC 22 dBm 175C Electrical Specifications at 25C (VDS = 6 V) Parameter Drain Current (at Saturation) Small Signal Gain Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression Saturated Output Power Gain at Saturation Thermal Resistance1 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Condition F = 18-23 GHz F = 18-23 GHz F = 18-23 GHz F = 23 GHz F = 23 GHz F = 23 GHz Symbol IDS G RLI RLO P1 dB PSAT GSAT JC Min. 12 Typ.2 300 14 -15 -17 Max. 390 -10 -10 Unit mA dB dB dB dBm dBm dB C/W 22 24 24.5 25.5 13 39 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 12/99A 1 18-23 GHz GaAs MMIC Power Amplifier AA022P1-00 Typical Performance Data 20 10 0 S21 26 25 24 23 22 21 20 19 18 S12 14 12 10 8 PIN 16 -10 -20 S11 S22 -30 -40 18 20 22 24 26 POUT (dBm) (dB) 17 16 18 21 22 23 24 25 Frequency (GHz) Frequency (GHz) Typical Small Signal Performance S-Parameters (VDS = 6 V) Output Characteristics as a Function of Frequency and Input Drive Level (VDS = 6 V) Bias Arrangement 6V 50 pF 50 pF .01 F Circuit Schematic RF IN RF OUT VDS 50 pF 50 pF 6V .01 F For biasing on, adjust VDS from zero to the desired value (6 V recommended). For biasing off, reverse the biasing on procedure. Detail A VDS RF IN SEE DETAIL A RF OUT VDS VDS 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 12/99A |
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